Krista R Khiangte
Department : Physics
Research Interests
● Group IV photonics
● Molecular beam epitaxy of semiconductor heterostructures
Professional Summary
Assistant Professor, Indian Institute of Technology Gandhinagar (Sep 2022 to present)
Assistant Professor, Banaras Hindu University (Aug 2020 – Sep 2022)
Post Doctoral Fellow, University of Arkansas at Fayetteville (Dec 2019 – Aug 2020)
Postdoctoral Research Asscociate, Indian Institute of Technology Bombay (Apr 2018 – Sep 2019)
Publications
1. Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE). Emmanuel Wangila, Samir K Saha, Rahul Kumar, Andrian Kuchuk, Calbi Gunder, Sylvester Amoah, Krista R Khiangte, Zhong Chen, Shui-Qing Yu, Gregory J Salamo. CrystEngComm 24, 4372 (2022).
2. Epitaxial Ge-Gd2O3 on Si (111) substrate by sputtering for germanium-on-insulator applications. Amita Rawat, Krista R Khiangte, Philipp Gribisch, H-J Osten, Apurba Laha, Suddhasatta Mahapatra, Udayan Ganguly. Thin Solid Films 731, 138732 (2021).
3. Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy. S Dev, Krista R Khiangte, S Lodha. Journal of Physics D: Applied Physics 53 (21), 21LT01 (2020)
4. Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures. Krista R Khiangte, Jaswant S Rathore, Sudipta Das, Ravindra S Pokharia, Jan Schmidt, HJ Osten, Apurba Laha, Suddhasatta Mahapatra. Journal of Applied Physics 124 (6), 065704 (2018).
5. Wafer-scale all-epitaxial GeSn-on-insulator on Si (1 1 1) by molecular beam epitaxy. Krista R Khiangte, JS Rathore, J Schmidt, HJ Osten, A Laha, S Mahapatra. Journal of Physics D: Applied Physics 51 (32), 32LT01 (2018).