Dr. Akshay K.

Publications

1K. Akshay and S. Karmalkar, Optimum Aspect Ratio of Superjunction Pillars Considering Charge Imbalance, vol. 68, no. 4, pp. 1798-1803, Apr. 2021. DOI: 10.1109/TED.2021.3060684
2K. Akshay and S. Karmalkar, Improved Theoretical Minimum of the Specific On-Resistance of a Superjunction, Semiconductor Science and Technology, vol. 36, no. 1, p. 015021, Dec. 2020. DOI: 10.1088/1361-6641/abc921
3K. Akshay and S. Karmalkar, Note Clarifying “Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design”, IEEE Journal of the Electron Devices Society, vol. 8, pp.1315-1316, Oct. 2020. DOI: 10.1109/JEDS.2020.3031916
4K. Akshay and S. Karmalkar, Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design, IEEE Journal of the Electron Devices Society, vol. 8, pp. 1129-1137, Sep. 2020. DOI: 10.1109/JEDS.2020.3021827
5K. Akshay and S. Karmalkar, Quick Design of a Superjunction Considering Charge Imbalance Due to Process Variations, IEEE Transactions on Electron Devices, vol. 67, no. 8, pp. 3024 3029, Aug. 2020. DOI: 10.1109/TED.2020.2998443
6M. G. Jaikumar, K. Akshay, and S. Karmalkar, An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs, Solid-State Electronics, vol.156, pp.73-78, Jun. 2019. DOI: 10.1016/j.sse.2019.03.025
1P. Singh, K. Akshay, H.L.R. Maddi, A. Agarwal, S. Karmalkar, Design of the Drift Layer of 0.6-1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time, in Proc. IEEE Electron Devices Technology & Manufacturing Conference, 2023. DOI: 10.1109/EDTM55494.2023.10103006
2K. Akshay, M. G. Jaikumar and S. Karmalkar, Charge Sheet Super Junction in 4H-Silicon Carbide, in Proc. IEEE Electron Devices Technology & Manufacturing Conference, 2020. DOI: 10.1109/EDTM47692.2020.9117845
3K. Akshay, R. P. Parvathy, and B. Bhuvan, Enhancement of Full Well Capacity of a Pinned Photodiode, International Workshop on the Physics of Semiconductor Devices, 2019.
4K. Akshay, M. Moun, R. Singh, and S. Karmalkar, TCAD Simulation of the Measured I-V Behaviour of Schottky Contacts on Exfoliated MoS2 Flakes, IEEE International Conference on Emerging Electronics, 2018.
5K. Akshay, R. P. Parvathy, and B. Bhuvan, System Level Design of a Novel CMOS Image Sensor with High Dynamic Range and Fill Factor, in Proc. IEEE TENCON, 2019. DOI: 10.1109/TENCON.2019.8929325
6K. Akshay, R. P. Parvathy, and B. Bhuvan, Analytical Modeling of Response Time and Full Well Capacity of a Pinned Photo Diode, in Proc. IEEE International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2018. DOI: 10.1109/DTIS.2018.8368568
7K. Akshay, R. P. Parvathy, and B.Bhuvan, Optimum length of a pinned photodiode, in Proc. IEEE International Conference on Electron Devices and Solid-State Circuits, 2017. DOI: 0.1109/EDSSC.2017.8126451